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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE200 DESCRIPTION *Low Collector-Emitter Saturation Voltage*DC Current Gain-Bandwidth Product *High DC Current Gain *Complement to MJE210 APPLICATIONS *Designed for low voltage, low-power, high-gain audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE 40 UNIT V Collector Current-Continuous Base Current PC Ti Tstg Collector Power Dissipation TC=25 Junction Temperature w w scs .i w 25 8 5 1 15 150 -65~150 MAX 8.34 83.4 .cn mi e V V A A W Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat) VBE(on) ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS IC= 10mA; IB= 0 IC= 0.5 A ;IB= 50mA IC= 2A ;IB= 0.2A IC=5A ;IB=1A B MJE200 MIN 25 MAX UNIT V 0.3 0.75 1.8 2.5 1.6 0.1 0.1 0.1 V V V V V A mA A IC=5A ;IB= 1A B IC= 2A; VCE= 1V VCB= 40V; IE= 0 VCB= 40V; IE= 0;TC= 125 Current-Gain--Bandwidth Product Collector Capacitance w w scs .i w VEB= 8V; IC= 0 IC= 0.5 A ; VCE= 1V IC= 2A ; VCE= 1V IC= 5A ; VCE=2V .cn mi e 70 180 45 10 65 IC= 0.1 A; VCE= 10V; ftest = 10MHz IE= 0; VCB= 10V; ftest = 0.1MHz MHz 80 pF isc Websitewww.iscsemi.cn |
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